GaN based Micro LED have advantages over standard LED in efficiency, brightness, pixel density and operation envelope. These LED are tiny (30X20um) structures often grown on sapphire substrates, from whom they must be separated to bond them to the active layer of a display. This separation is of achieved with Laser lift off, using UV wavelengths. The laser energy is absorbed in the interface between the GaN and sapphire, weakening the bond and enabling separation with almost no mechanical force.
In recent years, we at Holo/Or have seen increasing interest in utilizing an accurate top hat beam shaper to process the exact Micro LED shape, with scanning to achieve area processing. For this purpose, diffractive Gaussian to top hat beam shapers are the preferred means, as they achieve unparallel shaping accuracy, uniformity and edge steepness, even for very small shapes.